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Analysis of E-H plane tee junction using a variational formulation

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2 Author(s)
Das, B.N. ; Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India ; Narasimha Sarma, N.V.S.

A three-port equivalent network for an E-H plane tee junction is determined taking into account the effect of waveguide wall thickness and considering the contribution of the dominant mode to the imaginary part of the self-reaction. The parameters of the three-port equivalent network are determined. From a knowledge of the equivalent network parameters, the net impedance loading, reflection coefficient, and coupling are evaluated for an E-H plane tee junction. A comparison between theoretical and experimental results is also presented

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 10 )