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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

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6 Author(s)
F. Nallet ; Centre de Genie Electr., Inst. Nat. des Sci. Appliquees, Villeurbanne, France ; A. Senes ; D. Planson ; M. L. Locatelli
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The subject of this paper is a study of the ability of silicon carbide to be used for new solid state power device applications. A 4H-SiC current limiting device is studied. The device structure is a vertical power MOSFET with a preformed N channel. Its electrothermal behavior is presented through simulations with ISE TCAD tools. The efficiency of such a silicon device is estimated for comparison with SiC. A full simulation with two SiC devices inside an HSPICE modeled circuit is also proposed to study the ability of a bi-directional serial protection system

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Power Electronics and Motion Control Conference, 2000. Proceedings. IPEMC 2000. The Third International  (Volume:1 )

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