By Topic

Electron field emission through a very thin oxide layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
G. Yang ; Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA ; K. K. Chin ; R. B. Marcus

Field emission of an emitter covered with a very thin oxide layer is modeled and calculated numerically. The additional barrier due to the oxide layer is included in the tunneling problem by using the standard WKB method. The following physical parameters are considered: the oxide barrier height, the oxide conduction band-edge electron effective mass, and the oxide dielectric constant. Compared with the Fowler-Nordheim equation, which was derived for a clean metallic emitter, the calculation shows a reduction of the emission current density from an emitter covered with an oxide layer a few monolayers thick. After reaching a minimum emission current density, the emission increases when the thickness of the oxide layer increases further. Finally, the emission current density is saturated and stabilized

Published in:

IEEE Transactions on Electron Devices  (Volume:38 ,  Issue: 10 )