Cart (Loading....) | Create Account
Close category search window
 

A novel germanium implanted salicide technology for CMOS VLSI

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Pfiester, J.R. ; Motorola Inc., Austin, TX ; Yeargain, R.

A novel salicided twin-tub CMOS process using germanium implantation has been developed and characterized. Implantation of n+ and p+ dopants after titanium salicidation is used to fabricate devices with low junction leakage and good short-channel effects. The technology is based on a conventional twin-tub CMOS process that uses LTO sidewall spacers for both the LDD (lightly doped drain) and salicide formation. The high-dose phosphorus and boron implants that are performed through the silicide layer to form the n+ and p+ regions result in an enhanced diffusivity in the n- and p- regions, causing anomalously deep source-drain junctions with degraded device punchthrough leakage. This is confirmed by electrical measurements. Since the projected implantation range for phosphorus is greater than arsenic, thicker titanium silicide layers with lower sheet resistance are possible. Spreading resistance and electrical device measurements indicate that the lateral diffusion of the n- and p- regions is reduced by as much as 0.15 μm when germanium implantation is performed prior to titanium deposition. Diode leakage was less than 10 nA/cm2 for a 5 V bias at room temperature for both cases

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )

Date of Publication:

Dec 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.