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Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers

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7 Author(s)
Zebda, Y. ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI ; Lipa, R. ; Tutt, M. ; Pavlidis, D.
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A detailed theoretical analysis has been made of the frequency response and noise performance of the integrated device, taking account of the material characteristics of the pseudomorphic InGaAs/AlGaAs heterostructure and GaAs/AlGaAs multi-quantum-well (MQW) avalanche photodiode (APD). The effects of adding an inductor between the output on the detector and the input of the transistor and the effects of a feedback resistance on the noise, speed, and gain characteristics have been investigated. The authors have fabricated and measured the performance characteristics of a monolithic device consisting of an InGaAs/AlGaAs pseudomorphic single-quantum-well MODFET with 1-μm gate length and a 30 μm×50 μm APD with a 13-period GaAs/AlGaAs (400/400 Å) avalanching region on top of it and isolated from the FET by an AlGaAs layer. The devices were coupled with monolithic resistors and inductors and with air-bridge technology. The entire structure was grown on GaAs substrates by MBE (molecular-beam epitaxy) and is believed to be the first demonstration of a pseudomorphic and MQW integrated device. The measured characteristics of the device are reported

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )

Date of Publication:

Dec 1988

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