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Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-μm operation

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9 Author(s)
Cheng Li ; Inst. of Semicond., Acad. Sinica, Beijing, China ; Qinqing Yang ; Hongie Wang ; Jinzhong Yu
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A back-incident Si/sub 0.65/Ge/sub 0.35//Si multiple quantum-well resonant-cavity-enhanced photodetector operating near 1.3 μm is demonstrated on a separation-by-implantation-oxygen substrate. The resonant cavity is composed of an electron-beam evaporated SiO2-Si distributed Bragg reflector as a top mirror and the interface between the buried SiO2 and the Si substrate as a bottom mirror. We have obtained the responsivity as high as 31 mA/W at 1.305 μm and the full width at half maximum of 14 nm.

Published in:

IEEE Photonics Technology Letters  (Volume:12 ,  Issue: 10 )