By Topic

High-reflectance dielectric mirrors deposited by plasma-enhanced chemical vapor deposition on GaAs-AlGaAs semiconductor lasers with inductively coupled plasma etched facets

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Horst, S.C. ; Department of Defense, Fort George G. Meade, MD, USA ; Hinkel, D.S. ; Fitz, J.L. ; Turk, H.

High-reflectance dielectric mirrors (HRDMs) have been deposited on the etched facets of edge-emitting semiconductor ridge lasers. Dry etching using an inductively coupled plasma system formed the laser facets. The HRDMs were deposited using plasma enhanced chemical vapor deposition. Lasers with cavity lengths of 200 and 128 μm have been tested before and after deposition of the HRDMs with a reduction in threshold of 50% and 61%, respectively. Lasing has been demonstrated in devices with cavity lengths as small as 32 μm after the addition of the HRDMs.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 10 )