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A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-μm regime

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3 Author(s)
Fischer, M. ; Technische Phys., Wurzburg Univ., Germany ; Reinhardt, M. ; Forchel, A.

An all-epitaxial GaInAsN vertical-cavity surface-emitting laser for room-temperature (RT) emission at 1.3 /spl mu/m was developed by solid-source molecular beam epitaxy using a plasma source for nitrogen activation. RT photopumped operation is demonstrated at a wavelength of 1283 nm. Stimulated emission was observed up to a record high temperature of 143/spl deg/C, resulting in an emission wavelength of 1294 nm.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 10 )

Date of Publication:

Oct. 2000

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