A monolithic GaInAsN vertical-cavity surface-emitting laser for the 1.3-μm regime

An all-epitaxial GaInAsN vertical-cavity surface-emitting laser for room-temperature (RT) emission at 1.3 μm was developed by solid-source molecular beam epitaxy using a plasma source for nitrogen activation. RT photopumped operation is demonstrated at a wavelength of 1283 nm. Stimulated emission was observed up to a record high temperature of 143/spl deg/C, resulting in an emission wavelength of 1294 nm.