By Topic

Selective disordering of InGaAs strained quantum well by rapid thermal annealing with SiO/sub 2/ caps of different thicknesses for photonic integration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Shimada, N. ; Dept. of Electron. Eng., Osaka Univ., Japan ; Fukumoto, Y. ; Uemukai, M. ; Suhara, T.
more authors

We report impurity-free selective disordering by RTA with thick and thin SiO/sub 2/ caps for an InGaAs/AlGaAs strained QW structure. We present Fabry-Perot (FP) lasers integrated with selectively-disordered passive waveguides and demonstrate reduction of the passive waveguide loss. In the experiment, an InGaAs/AlGaAs strained single QW graded-index separate confinement heterostructure was used.

Published in:

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Date of Conference:

25-28 Sept. 2000