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We have fabricated 1.3 /spl mu/m strained InGaAs-InAlGaAs quantum well lasers on InGaAs ternary substrates. A low J/N, of 74 A/cm/sup 2//well and high T/sub 0/ of 106 K were simultaneously obtained, in spite of poor surface morphology of the wafers. The T/sub 0/ increased when J/N was reduced, as we previously reported. The InGaAs substrates whose quality is the same as that of commercial InP and GaAs substrates should make 1.3 /spl mu/m lasers of much lower threshold and higher T/sub 0/ possible.