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1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 /spl mu/m band

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7 Author(s)
Koyama, F. ; Microsyst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan ; Schlenker, D. ; Miyamoto, T. ; Chen, Z.
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Presents the high power operation of a tapered superluminescent diode with highly strained GaInAs/GaAs QWs emitting at in the 1.2 /spl mu/m band. As its background, we achieved the wavelength extension of GaInAs/GaAs QWs beyond 1.2 /spl mu/m by using highly strained QWs. Also, we presented low threshold and excellent temperature characteristics of 1.2 /spl mu/m QW lasers, and their application for single mode fiber datacom. However, there have been difficulties in realizing high power light sources in the wavelength range of 1.1-1.2 /spl mu/m. They may open up new applications, which include pumping for 1.2-1.3 /spl mu/m Raman fiber amplifiers, free-space LANs and so on.

Published in:

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Date of Conference:

25-28 Sept. 2000