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High power, highly reliable Al-free 940 nm diode lasers

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8 Author(s)
Erbert, G. ; Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany ; Beister, G. ; Knauer, A. ; Sebastian, J.
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We have demonstrated the excellent performance of high power Al-free InGaAs QW diode lasers in the wavelength range around 940 nm making these devices very well suited for pumping, material processing and telecommunication applications.

Published in:

Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International

Date of Conference:

25-28 Sept. 2000