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Accumulation mode MOS varactor SPICE model for RFIC applications

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2 Author(s)
S. C. Rustagi ; Inst. of Microelectron, Singapore ; C. C. C. Leung

An empirical model for a MOS varactor, valid in both the accumulation and depletion regions of bias over the RF frequency up to 10 GHz is proposed. Measured data that verify the are presented. The model is found to be valid over a wide range of MOS varactor layout dimensions and can be easily tuned to different processes

Published in:

Electronics Letters  (Volume:36 ,  Issue: 20 )