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High performance CW 1.26 μm GaInNAsSb-SQW and 1.20 μm GaInAsSb-SQW ridge lasers

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4 Author(s)
Shimizu, H. ; Furukawa Electr. Co. Ltd., Yokohama, Japan ; Kumada, K. ; Uchiyama, S. ; Kasukawa, A.

Long-wavelength GaInNAsSb SQW lasers and GaInAsSb SQW lasers that include small amounts of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE) and processed into ridge lasers. The GaInNAsSb lasers oscillated under CW operation at 1.258 μm at room temperature. A low CW threshold current of 10.2 mA and high characteristic temperature (T0) of 146 K were obtained for the GaInNAsSb lasers which is the best result for GaInNAs-based narrow-stripe lasers. Furthermore. The GaInAsSb lasers oscillated under CW operation at 1.20 μm at room temperature. A low CW threshold current of 6.3 mA and high characteristic temperature (T0) of 756 K were obtained for the GaInAsSb lasers, which is also the best result for the 1.2 μm-range of highly strained GaInAs-based narrow-stripe lasers

Published in:

Electronics Letters  (Volume:36 ,  Issue: 20 )