By Topic

Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Paulter, N.G. ; Los Alamos Nat. Lab., NM, USA ; Gibbs, A.J. ; Sinha, D.N.

An ion-implantation technique used to create high-speed photoconductive devices in semi-insulating gallium arsenide (GaAs) is described. The effects of electrical contacts, GaAs substrate material, and various implant parameters on device performance are presented. The best measured performance characteristics of sampled (correlation) waveforms are: full-width-at-half-maximum of 4.5 ps, rise time (10 to 90% of full amplitude) of 3.2 ps, and signal-to-noise ratio of approximately 50 dB (integration time is 10 ms)

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )