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The authors analyze the feasibility of laser action in erbium-doped silicon devices. The recent experimental results on spontaneous light emission at 1.54 /spl mu/m from erbium doped silicon diodes and theoretical calculation on Bragg grating technology are used to evaluate the best scenario performances. The effects of processes-induced errors on the threshold conditions are taken into account. They show that laser action in the Er:Si system is feasible.