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Laser compatible waveguide electroabsorption modulator with high contrast and low operating voltage in GaAs/AlGaAs

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5 Author(s)
Moss, D. ; Nat. Res. Council of Canada, Ottawa, Ont., Canada ; Landheer, D. ; Delage, A. ; Chatenoud, F.
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The authors demonstrate a SQW-GRINSCH ridge-waveguide electroabsorption modulator in GaAs/Al/sub x/Ga/sub 1-x/As that has a very high contrast ratio and low operating voltage and also acts as a laser with relatively low threshold current. They achieve contrast ratios of 10 dB/100 mu m of cavity length with an operating voltage of less than -4 V. In addition, when operated as laser, the device exhibits a threshold current of 25 mA. The active layer has a capacitance of 205 pF/mm/sup 2/ which would allow the fabrication of a device with a modulation bandwidth of over 20 GHz. The laser operated at a wavelength only 2-3 nm shorter than the optimum modulation wavelength.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:3 ,  Issue: 7 )

Date of Publication:

July 1991

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