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Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor

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7 Author(s)
Miller, D.A.B. ; AT&T Bell Labs., Holmdel, NJ, USA ; Feuer, M.D. ; Chang, T.Y. ; Shunk, S.C.
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The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark-effect quantum-well optical modulator, and a metal-semiconductor field-effect transistor (MESFET) to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. To provide an illustration of feasibility, the authors demonstrate signal amplification with a single MESFET.<>

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Photonics Technology Letters, IEEE  (Volume:1 ,  Issue: 3 )