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The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistors

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1 Author(s)
Chen, K.-L. ; Texas Instrum. Inc., Dallas, TX, USA

The electrostatic discharge (ESD) failure threshold of NMOS transistors in a shelf-aligned TiSi2 process has been identified to be sensitive to both interconnect processes and device structures. For a consistently good ESD protection level, there is a maximum limit of TiSi2 thickness formed on a shallow junction. The thickness is less than that required to ensure a low junction leakage current. The effect of contact processes on ESD is also studied. Both the size and quantity of contacts on the source-drain area of NMOS transistors have important effects on the ESD failure threshold of the NMOS transistor. The ESD failure threshold voltage an NMOS transistor is strongly correlated with the snapback voltage of its lateral parasitic bipolar transistor. The ESD pass voltage or the highest current that an NMOS transistor can withstand is a decreasing function of its parasitic bipolar snapback voltage. This finding explains why an abrupt junction device has a higher ESD failure threshold voltage than a graded-junction device. The gate potential of an NMOS transistor also has important effects on its failure threshold voltage

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 12 )