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High-efficiency AlGaAs/GaAs single-quantum-well semiconductor laser with strained superlattice buffer layer

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4 Author(s)
K. Imanaka ; OMRON Tateisi Electron. Co., Kyoto, Japan ; F. Sato ; H. Imamoto ; M. Shimura

The use of a strained superlattice buffer (SSLB) layer composed of a short-period (InGaAs)(GaAs) superlattice in a lattice-matched AlGaAs/GaAs system in order to reduce the internal stress is discussed. A five-times-higher photoluminescence peak intensity has been observed from a single quantum well (SQW) with the SSLB than without the SSLB. A high-quantum efficiency, a small cavity loss, and high-output power operation have been achieved in a narrow ridge-waveguide 770-nm graded-index-separate confinement heterostructure SQW laser diode with the SSLB.<>

Published in:

IEEE Photonics Technology Letters  (Volume:1 ,  Issue: 1 )