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GaN MESFETs on (111)Si substrate grown by MOCVD

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4 Author(s)
Egawa, T. ; Res. Center for Microstructure Devices, Nagoya Inst. of Technol., Japan ; Nakada, N. ; Ishikawa, H. ; Umeno, M.

A GaN metal-semiconductor field-effect transistor (MESFET) has been grown on (111) Si substrate by metalorganic chemical vapour deposition using Al0.27Ga0.73N/AlN intermediate layers. The device showed a maximum extrinsic transconductance 25 mS/mm and a drain-source current 169 mA/nm with a complete pinch-off for the 2.5 μm gate-length. The Al0.27Ga0.73N/AlN intermediate layers were effective in obtaining a mirror-like surface morphology and a high-resistive undoped GaN layer beneath a channel layer. The GaN MESFET on Si also exhibited no self-heating effects (drain-source current reduction) under high-power conditions. Which results from the better thermal properties of Si than those of sapphire

Published in:

Electronics Letters  (Volume:36 ,  Issue: 21 )