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Silicon carbide power electronics for high temperature applications

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2 Author(s)
Shenai, K. ; Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA ; Trivedi, M.

This paper describes the characterization and modeling of the performance and reliability of SiC devices. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. It will also result in a comprehensive physics-based defect model, a high-voltage diode behavioral circuit model, and improved edge-termination and passivation techniques. This paper shows initial results of experimental determination and modeling of the role of material defects and surface passivation on 100-V diode breakdown and electrical performance. The devices are subjected to dynamic stresses typical of switching applications to determine the dynamic SOA and avalanche rating of the devices

Published in:

Aerospace Conference Proceedings, 2000 IEEE  (Volume:5 )

Date of Conference:

2000

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