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Browse Journals & Magazines > Circuits, Devices and Systems ...> Volume:138 Issue:2 Help

Low-frequency noise in GaAs MESFETs related to backgating effects

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6 Author(s)
Birbas, A.N. ; Minnesota Univ., Minneapolis, MN, USA ; Brunn, B. ; van Rheenen, A.D. ; Gopinath, A.
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The influence of the backgating effect on low-frequency noise in GaAs MESFETs grown by molecular beam epitaxy is investigated. The low-frequency noise is of the 1/f type superimposed on generation-recombination noise. The backgating effect, although it reduces the current, increases current fluctuations and, hence, noise. Furthermore, it is shown that the incorporation of a low-temperature grown GaAs buffer, by MBE, significantly reduces the sensitivity of the noise level of the device to backgate bias

Published in:
Circuits, Devices and Systems, IEE Proceedings G  (Volume:138 ,  Issue: 2 )

Date of Publication: Apr 1991

Page(s):
175 - 178
ISSN :
0956-3768
INSPEC Accession Number:
3894502
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Apr 1991
Sponsored by :
IET

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