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Statistical and numerical method for MOSFET integrated-circuit sensitivity simulation using SPICE

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3 Author(s)
Wong, W.W. ; Dept. of Electr. Eng., Univ., of Central Florida, Orlando, FL, USA ; Winton, R.S. ; Liou, J.J.

Circuit sensitivity analysis helps a circuit designer to determine which transistors in a circuit are most influential on its performance and how variations of the device and process parameters affect the circuit output responses. The authors present a systematic approach for analysis of metal-oxide-semiconductor field effect transistor (MOSFET) integrated circuit DC performance as a function of channel length and width variations. The method, which involves an algorithm based on the Tellegen theorem and a database that contains statistical information on MOSFET process parameters, is implemented in the widely used SPICE2 circuit simulator. Sensitivity simulation of a MOSFET operational amplifier is included to illustrate the usefulness of the method

Published in:

Circuits, Devices and Systems, IEE Proceedings G  (Volume:138 ,  Issue: 1 )