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Harmonic and intermodulation performance of analogue CMOS circuits owing to mobility reduction

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1 Author(s)
Abuelma'atti, M.T. ; Dept. of Electr. Eng. & Comput. Sci., Bahrain Univ.

The current-voltage characteristic of a MOSFET operating in the saturation region and including the effect of surface-channel mobility reduction is modelled by a third-order polynomial expression. Using this expression, a general expression is obtained for the harmonics and intermodulation performance of a MOSFET operating in saturation and excited by a multi-sinusoidal gate-to-source voltage. Using this expression, the second-harmonic and the third-harmonic distortion performance of a linear voltage-to-current convertor proposed recently has been calculated. The results obtained are compared with previously published results

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Circuits, Devices and Systems, IEE Proceedings G  (Volume:138 ,  Issue: 1 )