By Topic

A new approach to the design optimization of HEMT and HBT for maximum gain-bandwidth of MSM-based integrated photoreceiver and its noise performance at 1.55 μm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Das, N.R. ; Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada ; Basu, P.K. ; Deen, M.J.

A new and simple approach has been proposed for the design optimization of devices using PSPICE, and it has been applied to the design of high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) for the maximum gain-bandwidth (GBW) of a front-end integrated photoreceiver that uses metal-semiconductor-metal (MSM) structure as the photodetector at 1.55 μm. The standard high frequency circuit models are used with some important modifications to simplify the model equations. The results of the optimized design show that the gain-bandwidth of the photoreceiver can be raised to a very high value compared to those of nonoptimized structures. Finally, the sensitivity of the integrated photoreceivers are calculated for a bit-error-rate of 10-9

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 11 )