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AlGaN/GaN heterostructure field-effect transistor model including thermal effects

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4 Author(s)
Albrecht, J.D. ; Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA ; Ruden, P.Paul ; Binari, S.C. ; Ancona, M.G.

A new AlGaN/GaN heterostructure field-effect transistor (HFET) model, in the framework of the gradual channel approximation and based on Monte Carlo simulations of the electron transport properties, is presented. The effects on the dc HFET output characteristics arising from contact resistances, from the ungated access channels between the gate and the source and between the gate and the drain, and from self-heating are analyzed. By examining the channel potential, the ungated regions are shown to have nonlinear characteristics. The solution method uses implicit analytical relationships for the current in the gated and ungated segments of the channel that are connected by matching boundary conditions. Thermal effects on the transport parameters associated with self-heating are included self-consistently. The model results are in very good agreement with experimental data from AlGaN/GaN HFETs fabricated on sapphire substrates. The model also identifies several device design parameters that need to be adjusted to obtain optimized performance in terms of output current and transconductance

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 11 )