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Thin films of dielectric STO have been prepared on Si-wafers by means of the conventional rf-magnetron sputtering technique. The dielectric and electric conduction properties of the films have been studied. The results showed that lower leakage current and the capacitance-voltage behavior of MIS structures indicated dielectric permittivity in the accumulation region and also a good STO/Si interface. The films exhibited a dielectric constant of 300, leakage current of 4×105 A/cm2 at a bias of 5 V and a charge storage density of about 2.5 μC/μm2. The resistivity of films deposited on silicon substrates was very high. SEM analyses showed that STO films have a uniform and fine grain structure
Published in:
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
(Volume:2
)
Date of Conference: 2000
- Page(s):
- 888 - 890 vol.2
- Meeting Date :
- 21 Jun 2000-26 Jun 2000
- Print ISBN:
- 0-7803-5459-1
- INSPEC Accession Number:
- 6819796
- Conference Location :
- Xi'an
- Digital Object Identifier :
- 10.1109/ICPADM.2000.876371
- Product Type:
- Conference Publications
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