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Dielectric properties of SrTiO3 thin films prepared by RF sputtering

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4 Author(s)
Woo Sun Lee ; Dept. of Electr. Eng., Chosun Univ., Kwangju, South Korea ; Nam Oh Kim ; Jong Kwan Kim ; Sang Yong Kim

Thin films of dielectric STO have been prepared on Si-wafers by means of the conventional rf-magnetron sputtering technique. The dielectric and electric conduction properties of the films have been studied. The results showed that lower leakage current and the capacitance-voltage behavior of MIS structures indicated dielectric permittivity in the accumulation region and also a good STO/Si interface. The films exhibited a dielectric constant of 300, leakage current of 4×105 A/cm2 at a bias of 5 V and a charge storage density of about 2.5 μC/μm2. The resistivity of films deposited on silicon substrates was very high. SEM analyses showed that STO films have a uniform and fine grain structure

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Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on  (Volume:2 )

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