Effects of thin-film spin-on glass dielectric loss on the performance of the uniformly distributed RC notch network

The influence of dielectric loss on the performance of the thin-film uniformly distributed RC notch network is considered on a theoretical and experimental basis. Dielectric loss is shown to have a significant effect on the network's notch tuning frequency and the magnitude of the notch tuning resistance. An open-circuit voltage transfer function which includes a frequency-dependent dielectric loss parameter is analyzed. Double precision computed results for the first-order and higher order notch tuning frequency and notch resistance values as a function of the dielectric loss parameter are presented. The application of a proposed dielectric loss compensation technique significantly reconciles the differences between the theoretical and experimental results measured from RC notch networks fabricated with a VLSI interlevel silicon dioxide spin-on glass planarizing dielectric.<
>