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Shallow level analysis in irradiated silicon

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4 Author(s)
Borchi, E. ; Dipt. di Energetica, Firenze, Italy ; Bruzzi, M. ; Li, Z. ; Pirollo, S.

Silicon p+/n/n+ junctions with nominal starting resistivity of 4-6 kΩcm have been irradiated with a 1 MeV neutron-equivalent fluence up to 4·1014 cm-2. In order to investigate the changes in the shallow level concentrations induced by irradiation, low temperature Thermally Stimulated Current measurements have been performed. For fluences over 1013 cm-2 a phosphorous removal is observed, probably due to the formation of the vacancy-phosphorous complex

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Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 4 )