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Inspection of critical dimension- and transmission uniformity of contact patterns by DUV imaging and regression algorithm

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2 Author(s)
Yamashita, K. ; Adv. LSI Technol. Lab., Toshiba R&D Center, Kawasaki, Japan ; Yamaguchi, S.

The SIA roadmap requires that mask CD uniformity be 16 nm for isolated lines, 24 nm for dense lines and contact patterns of 0.18 micron generation. The purpose of this paper is to give a CD and transmission inspection algorithm based on regression, applications to contact patterns and statistical analysis of experimental results.

Published in:

Microprocesses and Nanotechnology Conference, 2000 International

Date of Conference:

11-13 July 2000