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AFM probe tips using heavily boron-doped silicon cantilevers realized in a <110> bulk silicon wafer

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3 Author(s)
Il-Joo Cho ; Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Eun-Chul Park ; Euisik Yoon

In this paper, we report a new method of fabricating AFM (Atomic Force Microscope) probe tips at low cost. Most of previous AFM probe tips have been made of SOI wafers using back-side anisotropic silicon etch. Therefore, the wafer cost is high and the dimension control is poor because the tip length and thickness depend on wafer thickness variation and etch non-uniformity during the tip formation, respectively. In this paper we propose a new fabrication process in which probe tips are formed selfaligned to the p/sup +/ (heavily boron-doped) cantilevers from the front-side etch of a <110> bulk silicon wafer.

Published in:

Microprocesses and Nanotechnology Conference, 2000 International

Date of Conference:

11-13 July 2000