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Effects of SF/sub 6/ addition to O/sub 2/ plasma on polyimide etching in ECR plasma etcher

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3 Author(s)
Sang Hoon Kim ; Dept. of Mater. Eng., Hanyang Univ., Seoul, South Korea ; Hosung Moon ; Jinho Ahn

The effect of SF/sub 6/ addition in O/sub 2/ plasma on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. Plasma etching of polyimide with an O/sub 2//SF/sub 6/ mixture gas is desirable due to the improved etch topography and lowered dielectric constant in spite of reduced etch rate and etching selectivity to SiO/sub 2/ hard mask.

Published in:

Microprocesses and Nanotechnology Conference, 2000 International

Date of Conference:

11-13 July 2000