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Recently, ultra-small Si devices utilizing a quantum-size and/or Coulomb blockade effect have been received much attention to open a new Si device stream. This paper describes a fabrication technology of Si nanodot nanowire memory transistors with side gates. For the first time, an inorganic EB resist process was applied to fabricate Si nanowires. The Si nanodevice has a Si nanowire, Si nanodots, and a poly-Si nanogate and works as a single electron memory transistor.