By Topic

Simulation of Coulomb interactions in electron projection lithography using scattering contrast

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yamashita, H. ; ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan ; Munro, E. ; Rouse, J. ; Nomura, E.
more authors

Electron projection lithography (EPL), such as PREVAIL and SCALPEL, are among the candidates for next generation lithography. We modified the discrete Coulomb interaction simulator BOERSCH to be capable of incorporating the treatment of mask-scattered electrons into the simulation domain. Annular apertures of arbitrary number and size also can be set as the limiting aperture in addition to the usual round shape. Using this simulator, not only the resolution but also the performance of the SCALPEL GHOST proximity effect correction (PEC) can be evaluated. Therefore, this modified BOERSCH can provide almost perfect functions necessary for the EPL process development.

Published in:

Microprocesses and Nanotechnology Conference, 2000 International

Date of Conference:

11-13 July 2000