Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

CD controllability of chemically amplified resists for x-ray membrane mask fabrication

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Ezaki, M. ; ASET Super-fine SR Lithography Lab., NTT Telecommun. Energy Labs., Kanagawa, Japan ; Kikuchi, Y. ; Tsuboi, S. ; Watanabe, H.
more authors

E-beam mask writer is an extremely important tool to fabricate the x-ray mask. E-beam writing process is required to have enough placement accuracy and CD controllability for 1X mask. A variable-shaped 100 kV e-beam mask writer EB-X3 has been developed for x-ray membrane mask fabrication and evaluated by using commercially available positive tone resists. We have shown that the high resolution of 50 nm L/S could be obtained for ZEP-520 resists by using the stable 100 kV EB writer. In this study we focus on the chemically amplified (CA) resists for x-ray membrane mask fabrication.

Published in:

Microprocesses and Nanotechnology Conference, 2000 International

Date of Conference:

11-13 July 2000