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A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications

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5 Author(s)
Yue Tan ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. Technol., Hong Kong ; Kumar, M. ; Sin, J.K.O. ; Longxing Shi
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This paper presents a silicon-on-insulator (SOI) fully integrated RF power amplifier for single-chip wireless transceiver applications. The integrated power amplifier (IPA) operates at 900 MHz, and is designed and fabricated using a 1.5-/spl mu/m SOI LDMOS/CMOS/BJT technology. This technology is suitable for the complete integration of the front-end circuits with the baseband circuits for low-cost low-power high-volume production of single-chip transceivers. The IPA is a two-stage Class E power amplifier. It is fabricated along with the on-chip input and output matching networks. Thus, no external components are needed. At 900 MHz and with a 5-V supply, the power amplifier delivers 23-dBm output power to a 50-/spl Omega/ load with 16-dB gain and 49% power-added efficiency.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:35 ,  Issue: 10 )

Date of Publication:

Oct. 2000

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