By Topic

A high signal swing pass-transistor logic using surrounding gate transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Endoh, T. ; Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan ; Funaki, T. ; Sakuraba, Hiroshi ; Masuoka, F.

In this paper, pass-transistor logic (PTL) using surrounding gate transistors (SGT) is reported for the first time. This SGT-based PTL brings out the latent abilities of the PTL, especially improvement of the area occupation by 74% and the power-delay product by 70% at a supply voltage of 1 V compared to bulk MOSFET-based PTL

Published in:

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Date of Conference: