By Topic

Prediction of SiO2 sputtering yield using molecular dynamics simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kyusang Lee ; Comput. Sci. & Eng. Lab., SAIT, Suwon, South Korea ; Tai-Kyung Kim

The surface of processed wafers during the plasma etching process is exposed to a shower of relatively high energy particles, and the surface reaction that evaporates the upper surface layer is induced by the collision. The surface profile evolution during plasma etching needs to be known in order to control the fine details of features of semiconductor devices. The process is a complex combination of factors such as incident particle kinetic energy, incident angle and substrate conditions. In this study, we performed molecular dynamics simulations of Ar+ ions bombarding a SiO2 substrate and observed the sputtering yield as the incident angle and energy changes. The primary goal is to verify the process as a reliable source of microscopic sputtering yield data. We inserted 10 ps of relaxation right after each bombardment to allow the concentrated heat to diffuse into the bulk region, which gave us similar results to a previous study (Abrams and Graves, J. Vac. Sci. Tech. A vol. 16, pp. 3006-3019, 1998), and we observed the surface evolution during the process. These efforts predicted a different sputtering yield from the previous study, but the overall patterns of reaction product trajectories were similar

Published in:

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Date of Conference: