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Extraction and modeling methods for FET devices

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4 Author(s)
Follmann, R. ; IMST GmbH, Kamp-Lintfort, Germany ; Borkes, J. ; Waldow, P. ; Wolff, I.

The proposed method is based on spline functions, takes into account thermal and noise effects, allows a scaling of different FET device geometries, and is available in commercial CAD software like Agilents Series IV or ADS

Published in:

Microwave Magazine, IEEE  (Volume:1 ,  Issue: 3 )