By Topic

Calculation of amorphous silicon solar cell parameters with different doping levels

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
S. P. Sinha ; Dept. of Phys., Kohima Sci. Coll., Nagaland, India ; G. C. Dubey

Amorphous silicon solar cell efficiency has stagnated at 13.6% since the last decade. Extensive experimental and theoretical works have been done to improve this efficiency by increasing short circuit current, open circuit voltage and fill factor. In the present paper, an attempt has been made to calculate these parameters with different doping levels and to optimise them to get the best results. This has been done by choosing a proper value of barrier potentials at the p-i and i-n junctions. It has been noticed that doping levels affect the parameters. The present analysis has resulted in an increased value of cell parameters which will help in improving the cell efficiency

Published in:

Energy Conversion Engineering Conference and Exhibit, 2000. (IECEC) 35th Intersociety  (Volume:2 )

Date of Conference: