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Effect of gamma ray irradiation on the conduction mechanisms of radio-frequency-sputtered Ta2O5 films

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3 Author(s)
Wang, Ching-Wu ; Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan ; Chen, Shih-Fang ; Ren-De Lin

The microstructural and electrical conduction properties of sputtered Ta2O5 films pre-irradiated and γ-ray-irradiated were systematically investigated. Analytical results revealed that the crystallinity and the leakage current of the pre-irradiated sample were effectively improved by raising the irradiation dose at low doses of irradiation [1 M~4 M rad(Ta2O5)]; however higher doses of γ-ray irradiation [>4 M rad(Ta2O5)] undesirably deteriorated the film crystallinity, yielding a larger leakage current. Such a result leads the Frenkel-Poole conduction (pre-irradiated sample) transformed to Schottky emission conduction process [low doses (1 M~4 M rad(Ta2O5)) of γ-ray-irradiated samples] and then gradually to the Frenkel-Poole conduction [high doses (>4 M rad(Ta2O5)) of γ-ray-irradiated samples] again

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Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 4 )