Cart (Loading....) | Create Account
Close category search window

A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Qiqing Ouyang ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Chen, Xiangdong ; Mudanai, S.P. ; Wang, Xin
more authors

A novel Si/SiGe bandgap engineered pMOSFET structure, called a high mobility heterojunction transistor (HMHJT), is proposed. Reduced short-channel effects and high drive current are predicted in this new device. Simulation results of devices with 100-nm physical gate lengths are presented. Physical effects are illustrated, and the performance is compared to the conventional Si devices. For low standby power or low leakage (high VT) applications, the off-state leakage current due to drain induced barrier lowering (DIBL) or bulk punchthrough is substantially suppressed, and a very high Ion/Ioff ratio of 6×107 is obtained in a HMHJT without any anti-punchthrough implant. This ratio is a factor of 180 higher than that of a fabricated, conventional Si device with a similar threshold voltage found in the literature. On the other hand, for lower operating power (low VT) applications, an HMHJT has a drive current 80% higher compared to an optimized Si device, while satisfying the same criteria for the off-state leakage current

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 10 )

Date of Publication:

Oct 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.