By Topic

Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
S. C. Williams ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; K. W. Kim ; W. C. Holton

We develop a self-consistent, ensemble Monte Carlo device simulator that is capable of modeling channel carrier quantization and polysilicon gate depletion in nanometer-scale n-MOSFETs. A key feature is a unique bandstructure expression for quantized electrons. Carrier quantization and polysilicon depletion are examined against experimental capacitance-voltage (C-V) data. Calculated drain current values are also compared with measured current-voltage data for an n-MOSFET with an effective channel length (Leff) of 90 nm. Finally, the full capabilities of the Monte Carlo simulator are used to investigate the effects of carrier confinement in a Leff=25 nm n-MOSFET. In particular, the mechanisms affecting the subband populations of quantized electrons in the highly nonuniform channel region are investigated. Simulation results indicate that the occupation levels in the subbands are a strong function of the internal electric field configurations and two-dimensional (2-D) carrier scattering

Published in:

IEEE Transactions on Electron Devices  (Volume:47 ,  Issue: 10 )