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Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

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4 Author(s)
Abramo, A. ; DIEGM, Udine Univ., Italy ; Cardin, A. ; Selmi, L. ; Sangiorgi, E.

A solver for the two-dimensional (2-D) Schrodinger equation based on the k-space representation of the solution has been developed and applied to the simulation of 2-D electrostatic quantum effects in nano-scale MOS transistors. This paper presents the mathematical framework of the simulator, addresses the related accuracy and efficiency problems, and discusses the simulations performed to validate it. Furthermore, the 2-D quantum effects observed in the simulation of charge densities in tens-hundreds nanometer scale MOS structures are described

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 10 )

Date of Publication:

Oct 2000

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