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Relationship between yield and reliability impact of plasma damage to gate oxide

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5 Author(s)
Mason, P.W. ; Lucent Technol. Bell Labs., Orlando, FL, USA ; DeBusk, D.K. ; McDaniel, J.K. ; Oates, A.S.
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We report a direct correlation between gate oxide damage measured on antenna testers and yield loss as well as reliability degradation on production chips. The relationship between the magnitude of the yield loss and the reliability failure is explored. We demonstrate, by modeling and by experimental verification, that plasma charging damage can generically cause yield loss and long term reliability degradation but has only minor impact on short-term reliability

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Plasma Process-Induced Damage, 2000 5th International Symposium on

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