Referenced Items are not available for this document.
We describe a toolset of simulation programs and its use for the simulation of a memory cell based on Coulomb blockade. We present simulation results both for the main parameters of the memory cell and the influence of parasitic effects. We point out that both setting up specific programs and providing data exchange between them is necessary in order to describe the memory cell to a realistic extent
Published in:
Electron Devices, IEEE Transactions on
(Volume:47
,
Issue:
10
)
Date of Publication: Oct 2000
- Page(s):
- 1826 - 1830
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6731024
- Digital Object Identifier :
- 10.1109/16.870555
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct 2000
- Sponsored by :
- IEEE Electron Devices Society
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