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Memory cell simulation on the nanometer scale

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2 Author(s)
Muller, Heinz-Olaf ; Cavendish Lab., Cambridge Univ., UK ; Mizuta, H.

We describe a toolset of simulation programs and its use for the simulation of a memory cell based on Coulomb blockade. We present simulation results both for the main parameters of the memory cell and the influence of parasitic effects. We point out that both setting up specific programs and providing data exchange between them is necessary in order to describe the memory cell to a realistic extent

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Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 10 )