Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Memory cell simulation on the nanometer scale

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Muller, Heinz-Olaf ; Cavendish Lab., Cambridge Univ., UK ; Mizuta, H.

We describe a toolset of simulation programs and its use for the simulation of a memory cell based on Coulomb blockade. We present simulation results both for the main parameters of the memory cell and the influence of parasitic effects. We point out that both setting up specific programs and providing data exchange between them is necessary in order to describe the memory cell to a realistic extent

Published in:

Electron Devices, IEEE Transactions on  (Volume:47 ,  Issue: 10 )