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Etching methodologies in <111>-oriented silicon wafers

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7 Author(s)
Oosterbroek, R.E. ; Dept. of Electr. Eng., Twente Univ., Enschede, Netherlands ; Berenschot, J.W. ; Jansen, H.V. ; Nijdam, A.Jasper
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New methodologies in anisotropic wet-chemical etching of <111>-oriented silicon, allowing useful process designs combined with smart mask-to-crystal-orientation-alignment are presented in this paper. The described methods yield smooth surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching and wall passivation, structures can be etched at different depths in a wafer. Designs, using the <111>-crystal orientation, supplemented with pictures of fabricated devices, demonstrate the potential of using <111>-oriented wafers in microsystem design.

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Microelectromechanical Systems, Journal of  (Volume:9 ,  Issue: 3 )