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To work towards the continuing improvement of performance and density of ULSI technology, MOSFET devices are scaled down to sub-micrometer dimensions. It results in a decreasing number of channel impurities whose random distribution leads to significant fluctuations of threshold voltage and drain current. Some 3-D atomistic approaches of device simulation have been developed to describe this influence of discrete impurity distribution and its effect on electron velocity. In this work we propose an ionised-impurity scattering model suitable to 3-D Monte Carlo simulation with granular doping.