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An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution

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6 Author(s)
Barraud, S. ; Inst. d''Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France ; Dollfus, P. ; Galdin, S. ; Rengel, R.
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To work towards the continuing improvement of performance and density of ULSI technology, MOSFET devices are scaled down to sub-micrometer dimensions. It results in a decreasing number of channel impurities whose random distribution leads to significant fluctuations of threshold voltage and drain current. Some 3-D atomistic approaches of device simulation have been developed to describe this influence of discrete impurity distribution and its effect on electron velocity. In this work we propose an ionised-impurity scattering model suitable to 3-D Monte Carlo simulation with granular doping.

Published in:

Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on

Date of Conference:

22-25 May 2000